Novel Instruments

P-N Junction Diode Characteristics:NI-1601

Objectives:

• To plot Volt-Ampere Characteristics of Silicon P-N JunctionDiode.
• To find cut-in Voltage for Silicon P-N Junction diode.
• To find static and dynamic resistances in both forward and reverse biased conditions for P-N Junction diode.

Specifications :

• DC Variable power supply 0-12 V/350 mA.
• AC source 16 V,50 Hz .
• 3 No.s diodes DR25,IN4007,BY127.
• Provision for add o companents.

Zener Diode Characteristics: NI-1602

Objectives:

• To observe and draw the static characteristics of a zener diode.
• TTo find the voltage regulation of a given zener diode.

Specifications :

• DC Variable power supply 0-12 V/350 mA.
• AC source 16 V,50 Hz .
• 3 No.s diodes 3Z9,5Z1,8Z2.
• Provision for add o companents.

Transistor Common-Base Configuration: NI-1603

Objectives:

• To observe and draw the input and output characteristics of a transistor connected in common base configuration.
• To find α of the given transistor.

Specifications :

• Two variable power supplies 0 TO +/- 12V.
• One emitter resistance and one collector resistance.
• One transistor (BC107/SL100) in socket

Transistor CE Characteristics:NI-1604

Objectives:

• To draw the input and output characteristics of transistor connected in CE configuration.
• To find β of the given transistor.

Specifications :

• DC variable power supplies 0 TO +/- 12V.
• One emitter resistance and one collector resistance.
• One transistor (BC107/SL100) in socket.

FET Characteristics :NI-1605

Objectives:

• To draw the drain and transfer characteristics of a given FET.
• To find the drain resistance (rd) amplification factor (μ) and Tran conductance (gm) of the given FET.

Specifications :

• DC variable power supplies 0 TO +/- 12 V/350 mA.
• One gate resistance and one drain resistance.
• FET BFW 11.

U J T Characteristics:NI-1606

Objectives:

• To observe the characteristics of UJT and to calculate the Intrinsic Stand-Off Ratio (η).

Specifications :

• Two variable DC regulated power Supplies of 0-12V @ 250mA.
• Two values of resistors on board.
• DC voltmeter of 0-15V
• DC ammeter of 0-10mA.

Transistor CE Amplifier:NI-1607

Objectives:

• To Measure the voltage gain of a CE amplifier.
• To draw the frequency response curve of the CE amplifier.

Specifications :

• Transistor BC-107.
• Two values of resistors on board.
• DC variable regulated power Supply (0-30V, 1A).
• Resistors - 33KΩ,3.3KΩ,330Ω,1.5KΩ,1KΩ,2.2KΩ,4.7KΩ.
• Capacitors- 10µF,100µF.

Common Collector Amplifier:NI-1608

Objectives:

• To measure the voltage gain of a CC amplifier.
• To draw the frequency response of the CC amplifier.

Specifications :

• Transistor BC 107.
• Regulated Power Supply (0-30V).
• Resistors - 33KΩ,3.3KΩ,330Ω,1.5KΩ,1KΩ,2.2KΩ & 4.7KΩ.

RC Coupled Amplifier:NI-1609

Objectives:

• To calculate voltage gain, to observe frequency response.

Specifications :

• Variable DC regulated power supply.
• Transistors - BC 107.
• Resistors - 3.3K,33k,330Ω,1k.
• Capacitors- 10µF,100µF.

Wein Bridge Oscillator:NI-1611

Objectives:

• To observe that the wein bridge can be used as a good frequency selective network.
• With Built in speaker and detector outputs.

Specifications :

• Variable DC regulated power supply.
• Transistors - BC 107.
• Resistors - 10KΩ ,1kΩ,2.2kΩ,33kΩ,6.8kΩ.
• Capacitors- 10µF,100µF,0.01µF.

Common Source FET Amplifier:NI-1610

Objectives:

• To obtain the frequency response of the common source FET Amplifier.
• To find the bandwidth.

Specifications :

• TN-channel FET (BFW11).
• Resistors - 6.8KΩ,1MΩ,1.5KΩ.
• Capacitors - 0.1µF,47µF.
• Regulated power Supply 0-30V.